| PART |
Description |
Maker |
| SI5410DU-T1-GE3 |
9.8 A, 40 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| STS8NF30L |
N-CHANNEL 30V - 0.018 OHM -8A SO-8 STRIPFET POWER MOSFET
|
ST Microelectronics
|
| STD45NF75 STD45NF75T4 |
N-CHANNEL 75V - 0.018 OHM -40A DPAK STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| AP9402GYT-HF AP9402GYT-HF14 |
11.5 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
Simple Drive Requirement, Small Size & Lower Profile
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| UTD408L-TN3-T UTD408L-TN3-R UTD408-TN3-T UTD408-TN |
18 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE PACKAGE-3
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| IRHMJ58160 IRHMJ53160 IRHMJ54160 IRHMJ57160 |
35 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
|
IRF[International Rectifier]
|
|
